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- W1976038680 abstract "This paper Characterize pMOSFETs with stach channel of Si/SiGe whose thickness ratio are 8 nm /6.6 nm and 5 nm /4.6 nm related to the device without relaxed SiGe with 10 μm/ 80 nm/ 32 nm channel length by 10um channel width. In addition to the ratio, short channel significantly affect the driving current and interfacial defect." @default.
- W1976038680 created "2016-06-24" @default.
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- W1976038680 date "2013-02-01" @default.
- W1976038680 modified "2023-09-26" @default.
- W1976038680 title "Short channel effect of stack Si/SiGe pMOSFET" @default.
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- W1976038680 doi "https://doi.org/10.1109/isne.2013.6512369" @default.
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