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- W1976085257 abstract "The low-temperature wafer bonding of InGaAs/InP and GaAs was carried out at 200°C. The optical characteristic of lattice-matched InGaAs quantum wells (QWs) grown on an InP substrate which was bonded to a GaAs layer was investigated by measuring photoluminescence (PL) spectra at 77 K. After bonding, neither wavelength shift nor degradation of full-width at half maximum (FWHM) was observed. This implies that the bonding temperature of 200°C is sufficiently low to preserve the quality of InGaAs QWs. The low-temperature wafer bonding method is very attractive to realize optically pumped long-wavelength vertical cavity surface emitting lasers (VCSELs) and high power lasers." @default.
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- W1976085257 date "2002-06-15" @default.
- W1976085257 modified "2023-10-14" @default.
- W1976085257 title "Optical Characterization of InGaAs Quantum Wells after InP-GaAs Low-Temperature Wafer Bonding" @default.
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- W1976085257 doi "https://doi.org/10.1143/jjap.41.l669" @default.
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