Matches in SemOpenAlex for { <https://semopenalex.org/work/W1976201872> ?p ?o ?g. }
Showing items 1 to 89 of
89
with 100 items per page.
- W1976201872 endingPage "025026" @default.
- W1976201872 startingPage "025026" @default.
- W1976201872 abstract "Internal photoemission and magnetic resonance studies have been performed to investigate the charge trapping behavior and chemical nature of defects in ultrathin (~14 nm) high-k ZrO2 dielectric films deposited on p-Ge (1 0 0) substrates at low temperature (<200 °C) by plasma-enhanced chemical vapor deposition (PECVD) in a microwave (700 W, 2.45 GHz) plasma at a pressure of ~65 Pa. Both the band and defect-related electron states have been characterized using electron paramagnetic resonance, internal photoemission, capacitance–voltage and current–voltage measurements under UV illumination. Capacitance–voltage and photocurrent–voltage measurements were used to determine the centroid of oxide charge within the high-k gate stack. The observed shifts in photocurrent response of the Al/ZrO2/GeO2/p-Ge metal–insulator–semiconductor (MIS) capacitors indicate the location of the centroids to be within the ZrO2 dielectric near to the gate electrode. Moreover, the measured flat band voltage and photocurrent shifts also indicate a large density of traps in the dielectric. The impact of plasma nitridation on the interfacial quality of the oxides has been investigated. Different N sources, such as NO and NH3, have been used for nitrogen engineering. Oxynitride samples show a lower defect density and trapping over the non-nitrided samples. The charge trapping and detrapping properties of MIS capacitors under stressing in constant current and voltage modes have been investigated in detail." @default.
- W1976201872 created "2016-06-24" @default.
- W1976201872 creator A5002312407 @default.
- W1976201872 creator A5036261096 @default.
- W1976201872 creator A5070582418 @default.
- W1976201872 creator A5078135578 @default.
- W1976201872 date "2009-01-20" @default.
- W1976201872 modified "2023-09-27" @default.
- W1976201872 title "Paramagnetic defects and charge trapping behavior of ZrO2films deposited on germanium by plasma-enhanced CVD" @default.
- W1976201872 cites W1673943622 @default.
- W1976201872 cites W1977182953 @default.
- W1976201872 cites W1977685844 @default.
- W1976201872 cites W1981629763 @default.
- W1976201872 cites W2002765787 @default.
- W1976201872 cites W2003351742 @default.
- W1976201872 cites W2008027055 @default.
- W1976201872 cites W2045794387 @default.
- W1976201872 cites W2053338534 @default.
- W1976201872 cites W2062793141 @default.
- W1976201872 cites W2103160775 @default.
- W1976201872 cites W2117814282 @default.
- W1976201872 cites W2131802520 @default.
- W1976201872 cites W2153595058 @default.
- W1976201872 cites W2170109091 @default.
- W1976201872 cites W2390827020 @default.
- W1976201872 cites W4375921158 @default.
- W1976201872 doi "https://doi.org/10.1088/0268-1242/24/2/025026" @default.
- W1976201872 hasPublicationYear "2009" @default.
- W1976201872 type Work @default.
- W1976201872 sameAs 1976201872 @default.
- W1976201872 citedByCount "3" @default.
- W1976201872 countsByYear W19762018722015 @default.
- W1976201872 countsByYear W19762018722016 @default.
- W1976201872 crossrefType "journal-article" @default.
- W1976201872 hasAuthorship W1976201872A5002312407 @default.
- W1976201872 hasAuthorship W1976201872A5036261096 @default.
- W1976201872 hasAuthorship W1976201872A5070582418 @default.
- W1976201872 hasAuthorship W1976201872A5078135578 @default.
- W1976201872 hasConcept C121332964 @default.
- W1976201872 hasConcept C124712363 @default.
- W1976201872 hasConcept C185544564 @default.
- W1976201872 hasConcept C185592680 @default.
- W1976201872 hasConcept C188082385 @default.
- W1976201872 hasConcept C18903297 @default.
- W1976201872 hasConcept C192562407 @default.
- W1976201872 hasConcept C26873012 @default.
- W1976201872 hasConcept C2777924906 @default.
- W1976201872 hasConcept C49040817 @default.
- W1976201872 hasConcept C544956773 @default.
- W1976201872 hasConcept C550623735 @default.
- W1976201872 hasConcept C62520636 @default.
- W1976201872 hasConcept C82706917 @default.
- W1976201872 hasConcept C86803240 @default.
- W1976201872 hasConceptScore W1976201872C121332964 @default.
- W1976201872 hasConceptScore W1976201872C124712363 @default.
- W1976201872 hasConceptScore W1976201872C185544564 @default.
- W1976201872 hasConceptScore W1976201872C185592680 @default.
- W1976201872 hasConceptScore W1976201872C188082385 @default.
- W1976201872 hasConceptScore W1976201872C18903297 @default.
- W1976201872 hasConceptScore W1976201872C192562407 @default.
- W1976201872 hasConceptScore W1976201872C26873012 @default.
- W1976201872 hasConceptScore W1976201872C2777924906 @default.
- W1976201872 hasConceptScore W1976201872C49040817 @default.
- W1976201872 hasConceptScore W1976201872C544956773 @default.
- W1976201872 hasConceptScore W1976201872C550623735 @default.
- W1976201872 hasConceptScore W1976201872C62520636 @default.
- W1976201872 hasConceptScore W1976201872C82706917 @default.
- W1976201872 hasConceptScore W1976201872C86803240 @default.
- W1976201872 hasIssue "2" @default.
- W1976201872 hasLocation W19762018721 @default.
- W1976201872 hasOpenAccess W1976201872 @default.
- W1976201872 hasPrimaryLocation W19762018721 @default.
- W1976201872 hasRelatedWork W1753431589 @default.
- W1976201872 hasRelatedWork W1967680595 @default.
- W1976201872 hasRelatedWork W1976201872 @default.
- W1976201872 hasRelatedWork W1995972952 @default.
- W1976201872 hasRelatedWork W1998658058 @default.
- W1976201872 hasRelatedWork W1999600351 @default.
- W1976201872 hasRelatedWork W2031832452 @default.
- W1976201872 hasRelatedWork W2233567383 @default.
- W1976201872 hasRelatedWork W2782836188 @default.
- W1976201872 hasRelatedWork W2899084033 @default.
- W1976201872 hasVolume "24" @default.
- W1976201872 isParatext "false" @default.
- W1976201872 isRetracted "false" @default.
- W1976201872 magId "1976201872" @default.
- W1976201872 workType "article" @default.