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• W1976210781 endingPage "1927" @default.
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• W1976210781 abstract "In this paper we describe the electrical and physical characterizations of Ta 2 O 5 films on rapid thermal nitrided (RTN) rugged polycrystalline silicon electrodes for 256 M dynamic random access memory (DRAM) application. To overcome the higher leakage on Ta 2 O 5 films with rugged poly-Si bottom electrodes, we have successfully employed a light oxidation on rugged poly-Si grains for improving the acute angle of surface morphology, and a post-treatment with rapid thermal nitridation of N 2 O on Ta 2 O 5 films to reduce the leakage. In addition, a RTN pre-treatment is also applied to prevent rugged poly-Si oxidation during a Ta 2 O 5 film deposition that compromises the effective Ta 2 O 5 thickness. Our results show that Ta 2 O 5 film with an effective thickness of 1.4 nm (physical thickness=10 nm) and a low leakage current density of less than 1×10 -8 A/cm 2 , suitable for 256 M DRAM application, can be achieved. Our results also show that while a light oxidation on rugged poly-Si grains could improve the acute angle between the rugged poly-Si and its congruent amorphous silicon sub-layer, over oxidation on rugged poly-Si grains could degrade the leakage current and the time dependent dielectric breakdown (TDDB) characteristics of the stacked capacitor." @default.
• W1976210781 created "2016-06-24" @default.
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• W1976210781 date "1999-04-01" @default.
• W1976210781 modified "2023-10-18" @default.
• W1976210781 title "Leakage Current Reduction of Chemical-Vapor-Deposited Ta₂O₅ Films on Rugged Polycrystalline Silicon Electrode for Dynamic Random Access Memory Application" @default.
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• W1976210781 doi "https://doi.org/10.1143/jjap.38.1927" @default.
• W1976210781 hasPublicationYear "1999" @default.
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