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- W1976280319 abstract "The fabrication of Cu gates for thin-film transistors (TFTs) by electrodeposition through mask on a Ni layer has been developed. After pretreatment in acid sulfate solution, a Cu deposit acquires the property of good adhesion on a Ni layer. Organic additives [e.g., poly(ethylene glycol) (PEG), bis(3-sodiumsulfopropyl) disulfide (SPS)] were used to create the desired tapered shape of the deposited Cu pattern on a Ni layer. Furthermore, a multilayer Cu gate for TFTs was fabricated after the selective etching of the nickel layer. The new method provides an alternative wet process for fabricating Cu gates for TFTs." @default.
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- W1976280319 date "2006-11-10" @default.
- W1976280319 modified "2023-10-03" @default.
- W1976280319 title "Forming Tapered Pattern by Cu Electrodeposition Through Mask on Ni Seed Layer for Thin-Film Transistors" @default.
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- W1976280319 doi "https://doi.org/10.1143/jjap.45.l1215" @default.
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