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- W1976348462 abstract "Ferroelectric thin films of antimony sulphoiodide (SbSI) have been grown by flash evaporation in the thickness range of 0.1–1.5 μm. Annealing the films in a sulphur atmosphere at 100 °C for 10–12 min improved their stoichiometry and crystallinity. Structural studies revealed that films deposited normal to the substrate have a tendency to grow with the c axis oriented at 6° to the substrate. The refractive index and band gap estimated from the optical transmission curves for 1.0-μm-thick films were found to be 4 and 1.97 eV, respectively. The measured relative dielectric constant (ε′) for a 1.0-μm thick film at 100 KHz, 300 K was ∼73. Reproducible ferroelectric-to-paraelectric phase transitions were observed for films thicker than 0.2 μm." @default.
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- W1976348462 date "1985-11-01" @default.
- W1976348462 modified "2023-10-16" @default.
- W1976348462 title "Growth and characterization of flash-evaporated ferroelectric antimony sulphoiodide thin films" @default.
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- W1976348462 doi "https://doi.org/10.1063/1.335779" @default.
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