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- W1976399024 abstract "Nanocrystalline ZnO and Ga-doped ZnO thin films have been prepared by sol–gel spin coating technique. X-ray diffraction results indicated that the grain size of Ga-doped ZnO is smaller than that of ZnO. The EDAX analysis confirmed that Zn, O and Ga elements are present in the samples. HRTEM image shows the formation of ZnO and Ga-doped ZnO nanocrystalline thin films with an average grain size of 22.5 and 12.5 nm. Inverted polymer solar cell containing Ga-doped ZnO as an electron transport layer with device structure ITO/Ga-doped ZnO/poly(3-hexylthiophene) (P3HT):[6,6]-phenyl C71-butyric acid methyl ester (PC71BM)/MoO3/Al has been fabricated. The power conversion efficiency of inverted polymer solar cell with Ga-doped ZnO is 3.25%, which is higher than that of ZnO (1.96%)." @default.
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- W1976399024 date "2014-08-01" @default.
- W1976399024 modified "2023-10-16" @default.
- W1976399024 title "Nanocrystalline Ga-doped ZnO thin films for inverted polymer solar cells" @default.
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- W1976399024 doi "https://doi.org/10.1016/j.solener.2013.12.009" @default.
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