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- W1976433875 abstract "The electrical resistivity of diamond chemically vapour deposited on p-doped silicon wafers was measured at room temperature. The diamond was synthesized by the tantalum hot-filament method, whereby the composition of the reactive gas (CH4O2H2) was varied. The volume ratio of methane to oxygen was kept constant at five to one.The experimental results show that diamond layers can be produced having a high electrical surface and volume resistivity. Addition of oxygen during diamond growth permits higher deposition rates and yields a higher resistivity of the diamond films. However, within a diamond layer spots always exist which have locally a much lower electrical resistivity (local defect points). The number of these defects depends on the diamond growth conditions. Addition of oxygen in the reactive gas increases these defects." @default.
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- W1976433875 date "1992-10-01" @default.
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- W1976433875 title "Reclamation of tungsten and molybdenum from waste materials" @default.
- W1976433875 doi "https://doi.org/10.1016/0026-0657(92)91910-c" @default.
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