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- W1976533554 abstract "We have grown epitaxial trilayer structures of YBa2Cu3O7/CeO2/YBa2Cu3O7 using pulsed laser deposition. The thin films were grown on a CeO2 buffer layer deposited on R-plane sapphire. The crystal quality and orientation of the CeO2 and the YBa2Cu3O7 layers has been determined using x-ray diffraction and transmission electron microscope cross-sections. All of the constituent films of the trilayer structure grow epitaxially and have sharp interfaces at an atomic level. The films have Tc above 88K, resistance ratioss between 2.5 and 3.0 and surface resistances at 31 GHz and 77K, which are lower than that of copper." @default.
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- W1976533554 date "1991-12-01" @default.
- W1976533554 modified "2023-10-01" @default.
- W1976533554 title "Epitaxial CeO2 buffer layers and cross-overs for YBa2Cu3O7 thin films" @default.
- W1976533554 cites W1996861195 @default.
- W1976533554 doi "https://doi.org/10.1016/0921-4534(91)91174-3" @default.
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