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- W1976558826 abstract "A GaAs/n+-In0.2Ga0.8As/GaAs doped-channel field-effect transistor structure has been fabricated and studied. A typical transistor performance with a threshold voltage of about −3.0 V and transconductance of up to 160 mS/mm is obtained in the lower gate-source voltage (VGS <−1.0 V) regime. However, for some devices, the three-terminal-controlled N-shaped negative-differential-resistance (NDR) behavior is observed at the saturation regime of current–voltage characteristics under higher gate-source bias (VGS≥−1.0 V) condition. The interesting NDR phenomenon is believed to be attributed to the real-space transfer and deep-level electron trapping effect." @default.
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- W1976558826 date "1995-07-17" @default.
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- W1976558826 title "Observation of the anomalous current–voltage characteristics of GaAs/<i>n</i><sup>+</sup>‐InGaAs/GaAs doped‐channel structure" @default.
- W1976558826 doi "https://doi.org/10.1063/1.114643" @default.
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