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- W1976584309 abstract "Abstract We fabricated electrolyte-insulator-semiconductor (EIS) devices using a solution process and measured the sensing properties of EISdevices according to the thicknesses of sensing membrane. For high pH sensitivity and better stability properties, we used SiO 2 /HfO x (OH) layer as a sensing membrane. In this work, HfO x sensing membranes were deposited on 5 nm thick SiO 2 buffer layer by spin coaterwith thicknesses of 15, 31, 42, 55 nm, respectively. As a result, we founded that the thickness of HfO x sensing membrane affects tosensitivity and chemical stability of EIS device. Especially, the EIS device with 42 nm thick HfO x membrane showed superior sensingability in terms of pH-sensitivity, linearity, hysteresis voltage and drift rate characteristics than the other devices. In conclusion, weconfirmed that it is possible to improve the sensing ability and the chemical stability properties using optimized thickness of sensingmembrane and proper annealing process. Keywords : pH sensor, EIS, hfO" @default.
- W1976584309 created "2016-06-24" @default.
- W1976584309 creator A5026616959 @default.
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- W1976584309 date "2013-05-31" @default.
- W1976584309 modified "2023-09-24" @default.
- W1976584309 title "Thickness Dependence of Solution Deposited HfOxSensing Membrane for Electrolyte-Insulator-Semiconductor (EIS) Structures" @default.
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- W1976584309 doi "https://doi.org/10.5369/jsst.2013.22.3.233" @default.
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