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- W1976596203 abstract "Abstract Valley splitting in surface quantum states of silicon MOSFETs in parallel electric and magnetic fields is enhanced by many-body effects due to the Coulomb interaction. This enhancement was calculated by Ohkawa and Uemura for T = 0 K. We extend their theory to finite temperatures and compute the maximum enhanced valley splitting ΔE when the position of the chemical potential is midway between to valley energy levels. The bare splitting ΔE0 is proportional to the carrier density Ninv. For the numerical calculations we have chosen ΔE 0 = 0.15 ( N inv 10 12 cm −2 ) meV . The enhanced valley splitting breaks down above a certain temperature, when, in a two-fold positive feedback mechanism, with increasing temperature the difference in occupation numbers of two valley energy levels decreases and the polarization increases simultaneously: e.g. at 14 Tesla, for line-width Γ = 1 meV and Landau quantum number N = 1 we find that the enhanced splitting ΔE stays approximately constant at its T = 0 K value of 4.84 meV up to T = 2 K. Then it drastically drops down with increasing temperature and beyond 5 K it asymptotically approaches its bare splitting value ΔE0 = 0.26 meV. Systematic experimental investigation of the temperature dependence of valley splitting and comparison with the present theory should provide a basis for discriminating among the different theories of the bare splitting." @default.
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- W1976596203 date "1980-08-01" @default.
- W1976596203 modified "2023-09-27" @default.
- W1976596203 title "Theory of the temperature dependence of the enhanced valley splitting in surface states of silicon mosfets" @default.
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- W1976596203 doi "https://doi.org/10.1016/0039-6028(80)90517-8" @default.
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