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• W1976661722 abstract "A new hydrogen sensor based on a GaAs-based high electron mobility transistor (HEMT) with a catalytic Pt-oxide-Al0.24Ga0.76As (MOS) gate structure is fabricated and demonstrated. The threshold voltage shift, hydrogen detection sensitivity, and transient responses of the device under different hydrogen concentrations and temperature are measured and studied. Based on the transistor amplification action, even at an extremely low hydrogen concentration of 14ppm H2/air, the studied device shows significant drain current variation (about 0.12mA). Furthermore, the studied device can be operated under wider operating temperature regimes with remarkable hydrogen-sensing properties. The decreased hydrogen detection capability with increasing operating temperature demonstrates the exothermic reaction of the hydrogen adsorption and desorption processes." @default.
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• W1976661722 date "2005-08-16" @default.
• W1976661722 modified "2023-09-25" @default.
• W1976661722 title "Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor" @default.
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• W1976661722 doi "https://doi.org/10.1116/1.2013314" @default.
• W1976661722 hasPublicationYear "2005" @default.
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