Matches in SemOpenAlex for { <https://semopenalex.org/work/W1976693025> ?p ?o ?g. }
Showing items 1 to 88 of
88
with 100 items per page.
- W1976693025 endingPage "4947" @default.
- W1976693025 startingPage "4944" @default.
- W1976693025 abstract "The diffusion parameters of indium in silicon are investigated. Systematic diffusion experiments in dry oxidizing ambients at temperatures ranging from 800 to 1050 °C are conducted using silicon wafers implanted with indium. Secondary-ion-mass spectrometry (SIMS) is used to analyze the dopant distribution before and after heat treatment. The oxidation-enhanced diffusion parameter [R. B. Fair, in Semiconductor Materials and Process Technology Handbook, edited by G. E. McGuire (Noyes, Park Ridge, NJ, 1988); A. M. R. Lin, D. A. Antoniadis, and R. W. Dutton, J. Electrochem. Soc. Solid-State Sci. Technol. 128, 1131 (1981); D. A. Antoniadis and I. Moskowitz, J. Appl. Phys. 53, 9214 (1982)] and the segregation coefficient at the Si/SiO2 interface [R. B. Fair and J. C. C. Tsai, J. Electrochem. Soc. Solid-State Sci. Technol. 125, 2050 (1978)] (ratio of indium concentration in silicon to that in silicon dioxide) are extracted as a function of temperature using SIMS depth profiles and the silicon process simulator PROPHET [M. Pinto, D. M. Boulin, C. S. Rafferty, R. K. Smith, W. M. Coughran, I. C. Kizilyalli, and M. J. Thoma, in IEDM Technical Digest, 1992, p. 923]. It is observed that the segregation coefficient of indium at the Si/SiO2 interface is mIn≪1, similar to boron; however, unlike boron, the segregation coefficient of indium at the Si/SiO2 interface decreases with increasing temperature. Extraction results are summarized in analytical forms suitable for incorporation into other silicon process simulators. Finally, the validity of the extracted parameters is verified by comparing the simulated and measured SIMS profiles for an indium implanted buried-channel p-channel metal–oxide–semiconductor field-effect-transistor [I. C. Kizilyalli, F. A. Stevie, and J. D. Bude, IEEE Electron Device Lett. (1996)] process that involves a gate oxidation and various other thermal processes." @default.
- W1976693025 created "2016-06-24" @default.
- W1976693025 creator A5034515040 @default.
- W1976693025 creator A5035266560 @default.
- W1976693025 creator A5060733821 @default.
- W1976693025 creator A5082646935 @default.
- W1976693025 date "1996-11-01" @default.
- W1976693025 modified "2023-09-27" @default.
- W1976693025 title "Diffusion parameters of indium for silicon process modeling" @default.
- W1976693025 cites W1967818062 @default.
- W1976693025 cites W1986113429 @default.
- W1976693025 cites W2005271556 @default.
- W1976693025 cites W2069144385 @default.
- W1976693025 cites W2074272656 @default.
- W1976693025 doi "https://doi.org/10.1063/1.363537" @default.
- W1976693025 hasPublicationYear "1996" @default.
- W1976693025 type Work @default.
- W1976693025 sameAs 1976693025 @default.
- W1976693025 citedByCount "49" @default.
- W1976693025 countsByYear W19766930252012 @default.
- W1976693025 countsByYear W19766930252013 @default.
- W1976693025 countsByYear W19766930252015 @default.
- W1976693025 countsByYear W19766930252016 @default.
- W1976693025 countsByYear W19766930252019 @default.
- W1976693025 crossrefType "journal-article" @default.
- W1976693025 hasAuthorship W1976693025A5034515040 @default.
- W1976693025 hasAuthorship W1976693025A5035266560 @default.
- W1976693025 hasAuthorship W1976693025A5060733821 @default.
- W1976693025 hasAuthorship W1976693025A5082646935 @default.
- W1976693025 hasConcept C113196181 @default.
- W1976693025 hasConcept C121332964 @default.
- W1976693025 hasConcept C145148216 @default.
- W1976693025 hasConcept C160671074 @default.
- W1976693025 hasConcept C171250308 @default.
- W1976693025 hasConcept C178790620 @default.
- W1976693025 hasConcept C185592680 @default.
- W1976693025 hasConcept C191897082 @default.
- W1976693025 hasConcept C191952053 @default.
- W1976693025 hasConcept C192562407 @default.
- W1976693025 hasConcept C43617362 @default.
- W1976693025 hasConcept C49040817 @default.
- W1976693025 hasConcept C501308230 @default.
- W1976693025 hasConcept C543292547 @default.
- W1976693025 hasConcept C544956773 @default.
- W1976693025 hasConcept C57863236 @default.
- W1976693025 hasConcept C69357855 @default.
- W1976693025 hasConcept C77671233 @default.
- W1976693025 hasConcept C97355855 @default.
- W1976693025 hasConceptScore W1976693025C113196181 @default.
- W1976693025 hasConceptScore W1976693025C121332964 @default.
- W1976693025 hasConceptScore W1976693025C145148216 @default.
- W1976693025 hasConceptScore W1976693025C160671074 @default.
- W1976693025 hasConceptScore W1976693025C171250308 @default.
- W1976693025 hasConceptScore W1976693025C178790620 @default.
- W1976693025 hasConceptScore W1976693025C185592680 @default.
- W1976693025 hasConceptScore W1976693025C191897082 @default.
- W1976693025 hasConceptScore W1976693025C191952053 @default.
- W1976693025 hasConceptScore W1976693025C192562407 @default.
- W1976693025 hasConceptScore W1976693025C43617362 @default.
- W1976693025 hasConceptScore W1976693025C49040817 @default.
- W1976693025 hasConceptScore W1976693025C501308230 @default.
- W1976693025 hasConceptScore W1976693025C543292547 @default.
- W1976693025 hasConceptScore W1976693025C544956773 @default.
- W1976693025 hasConceptScore W1976693025C57863236 @default.
- W1976693025 hasConceptScore W1976693025C69357855 @default.
- W1976693025 hasConceptScore W1976693025C77671233 @default.
- W1976693025 hasConceptScore W1976693025C97355855 @default.
- W1976693025 hasIssue "9" @default.
- W1976693025 hasLocation W19766930251 @default.
- W1976693025 hasOpenAccess W1976693025 @default.
- W1976693025 hasPrimaryLocation W19766930251 @default.
- W1976693025 hasRelatedWork W1802250409 @default.
- W1976693025 hasRelatedWork W1966205888 @default.
- W1976693025 hasRelatedWork W1978189183 @default.
- W1976693025 hasRelatedWork W2027205412 @default.
- W1976693025 hasRelatedWork W2029782489 @default.
- W1976693025 hasRelatedWork W2049212995 @default.
- W1976693025 hasRelatedWork W2051142972 @default.
- W1976693025 hasRelatedWork W2121493818 @default.
- W1976693025 hasRelatedWork W2304582009 @default.
- W1976693025 hasRelatedWork W2353270493 @default.
- W1976693025 hasVolume "80" @default.
- W1976693025 isParatext "false" @default.
- W1976693025 isRetracted "false" @default.
- W1976693025 magId "1976693025" @default.
- W1976693025 workType "article" @default.