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• W1976790717 abstract "The effect of oxygen-doping on the electron transport in sputtered hydrogenated amorphous silicon has been studied by means of a time-of-flight technique. Incorporation of a slight amount of oxygen enhances both the mobility and the mobility-lifetime product. An electron drift mobility as high as 8×10 -2 cm 2 /V·s at room temperature with a non-dispersive character is observed. The enhancement of the electron mobility and the non-dispersive electron transport in slightly oxygen-doped films are discussed on the basis of two-fold coordinated oxygen atoms and oxygen-related donors." @default.
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• W1976790717 date "1987-04-01" @default.
• W1976790717 modified "2023-09-26" @default.
• W1976790717 title "Electron Transport in Oxygenated Amorphous Hydrogenated Silicon Prepared by Reactive Sputtering" @default.
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• W1976790717 doi "https://doi.org/10.1143/jjap.26.517" @default.
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