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- W1976805488 abstract "We have studied the epitaxial growth of bismuth overlayers on Si(111) surfaces by in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Lateral growth of texture two-dimensional (2D) nanocrystals takes place after the formation of an initial disordered wetting layer on the 7×7 DAS structure. After the coalescence of the texture 2D nanocrystals, alignment in their azimuthal orientation takes place. At slightly more than 15 monolayers, the growth front of the overlayer exhibits a perfectly long-range ordered Bi(0001)-1×1 surface. The films prepared on Si(111)-α-√3×√3-Bi or on Si(111)-β-√3×√3-Bi do not show as good quality as those on Si(111)-7×7. Thus, the initial disordered wetting layer formed on the 7×7 surface successfully accommodates the large 18% lattice mismatch between the Si(111) and Bi(0001) planes and allows the 2D nanocrystal to grow laterally." @default.
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- W1976805488 date "2000-07-01" @default.
- W1976805488 modified "2023-10-18" @default.
- W1976805488 title "Epitaxial Growth of Single-Crystal Ultrathin Films of Bismuth on Si(111)" @default.
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- W1976805488 doi "https://doi.org/10.1143/jjap.39.4567" @default.
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