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- W1976935595 abstract "Fast recovery p-i-n diode with anode p-n junction modified by the radiation-enhanced diffusion (RED) of gold is presented. The RED of gold is shown to provide the local lifetime control of excess carriers, the compensation of n-base doping profile from n-type to p-type, and the enhancement of concentration of two gold-related deep levels. The deep level Au <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-/0</sup> (E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>C</sub> -0.549 eV) controls the low-level lifetime, whereas the gold-hydrogen pair (E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>C</sub> -0.215 eV) the high-level lifetime. This feature eliminates the drawback of negative temperature coefficient of forward voltage drop of the RED with palladium and platinum, where only a single deep level, which controls the high-level lifetime, is enhanced. The RED of gold provides the maximal reverse bias safe operation area at the annealing temperature of 600°C, whereas the RED of palladium at 650°C." @default.
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- W1976935595 date "2014-03-01" @default.
- W1976935595 modified "2023-09-23" @default.
- W1976935595 title "High-Power Silicon p-i-n Diode With the Radiation Enhanced Diffusion of Gold" @default.
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- W1976935595 doi "https://doi.org/10.1109/led.2014.2298754" @default.
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