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- W1976996855 abstract "What is believed to be the first InGaP/GaAs heterojunction bipolar transistor grown on SiGe/Si substrate is reported. The collector-emitter offset voltage and the knee voltage of the device are ∼150 mV and <1 V, respectively. The maximum gain of the device is∼25 at collector current of∼100 mA. The collector and base ideality factor are ∼1.01 and ∼1.4, respectively. These results show the good potential for integrating the InGaP/GaAs heterojunction bipolar transistor on Si substrate using the compositionally graded SiGe buffer layer approach." @default.
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- W1976996855 date "2008-01-01" @default.
- W1976996855 modified "2023-09-23" @default.
- W1976996855 title "InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer" @default.
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- W1976996855 doi "https://doi.org/10.1049/el:20083328" @default.
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