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- W1977005486 abstract "The effects of the thermal annealing induced diffusion on the photoluminescence (PL) of a GaAs∕GaInAs∕GaAs∕GaInNAs∕GaAs quantum well (QW) structure grown by solid source molecular beam epitaxy are studied. The PL experimental results in conjunction with the numerical quantum-mechanical modeling that predicts the changes in the QW confining potential with group-III atomic diffusion, have been used to obtain the values for diffusion coefficient. The activation energies of GaInAs∕GaAs QW (ED,GIA) were found to be between 0.49to0.51eV, while that of GaInNAs∕GaAs QW (ED,GINA) showed comparable values of between 0.6 to a 0.67eV, as annealing time increases from 10to30s. The ED,GIA and ED,GINA values are attributed to the same interstitial diffusion mechanism." @default.
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- W1977005486 date "2005-01-01" @default.
- W1977005486 modified "2023-09-27" @default.
- W1977005486 title "Thermally induced diffusion in GaInNAs∕GaAs and GaInAs∕GaAs quantum wells grown by solid source molecular beam epitaxy" @default.
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- W1977005486 doi "https://doi.org/10.1063/1.1825632" @default.
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