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- W1977043332 abstract "In this work, we have made AlGaAs/GaAs gain-guided broad- area vertical-cavity surface-emitting lasers (VCSELs) in the 850-nm range. For higher power applications such as optical pumping and optical communications, board-area VCSELs and VCSEL arrays are needed. The distributed Bragg reflectors (DBRs) of the VCSELs consist of Al<SUB>0.12</SUB>Ga<SUB>0.88</SUB>As/AlAs quarter-wave stacks. The GRINSCH active region is consisted of an undoped three-quantum-well GaAs/Al<SUB>0.3</SUB>Ga<SUB>0.7</SUB>As, two undoped Al<SUB>0.3</SUB>Ga<SUB>0.7</SUB>As confinement layers, and two undoped linearly graded Al<SUB>x</SUB>Ga<SUB>1-x</SUB>As layers. The current confinement of the VCSELs was made by proton implantation with an implantation energy of 280 KeV. The emitting window diameters are 30 to 50 (mu) m. A very high cw optical power of 23.4 mW and a pulsed optical power of over 36 mW were measured for a 50-(mu) m aperture device. These VCSELs are suitable for higher power applications. The VCSELs showed multiple transverse mode characteristics. The near-field characteristics and spectrum of the devices were measured and analyzed. The modulation characteristics of the VCSELs were also measured. A 3 dB bandwidth (f<SUB>3dB</SUB>) of 5.6 Ghz was measured for a 30-(mu) m aperture device at 20mA." @default.
- W1977043332 created "2016-06-24" @default.
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- W1977043332 date "2000-07-11" @default.
- W1977043332 modified "2023-09-23" @default.
- W1977043332 title "DC and AC characteristics of 850-nm broad-area vertical-cavity surface-emitting lasers" @default.
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- W1977043332 doi "https://doi.org/10.1117/12.392195" @default.
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