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• W1977070757 abstract "Ion beam mixing of Al in Si has been studied by implanting 100 keV 40Ar+ ions into 300 Å Al overlayers on Si substrates. The mixing of the collisionally similar Al and Si atoms was studied with the nuclear resonance broadening technique. It is characterized to be proportional to the square root of ion fluence. The mixing is compared with that of Al in Si due to irradiation with 40 keV 22Ne+ ions studied recently by us. Mechanisms which enhance the observed atomic mixings with about 5 times that expected for ballistic mixing have been studied by Monte Carlo simulation of the collisional cascades. The results indicate the need to revise the present model of the ballistic mixing by focusing more attention to the effect of low-energy impurity—matrix atom collisions." @default.
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• W1977070757 date "1988-07-01" @default.
• W1977070757 modified "2023-09-30" @default.
• W1977070757 title "Mechanisms in the ion beam mixing of Al in Si" @default.
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• W1977070757 doi "https://doi.org/10.1016/0168-583x(88)90362-x" @default.
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