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- W1977343424 abstract "The aluminium-induced lateral crystallization (AILC) of amorphous silicon (a-Si) on a glass substrate has been investigated. By means of a photoresist-based process, Al islands (100 nm) were thermally evaporated using 15 V, 3.5 A, and 25 V, 5.6 A on the a-Si layer (100 nm), which was deposited on a glass substrate. SEM examinations indicated that the Al islands exhibited smooth and crystalline-grain morphology. Annealing processes were carried out at 748 and 823 K for various times. After annealing, AILC could be clearly observed in the crystalline-grain sample, but not in the smooth sample. TEM analyses showed that the mechanism of AILC resulted from two layer exchange processes. First, the Al islands exchanged with the underlying a-Si layer vertically during AIC, and then the generation of Al particles accompanying AIC caused a lateral layer exchange with the remaining a-Si layer with further annealing." @default.
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- W1977343424 date "2010-09-01" @default.
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- W1977343424 title "Mechanism of Aluminum Induced Lateral Crystallization of Amorphous Silicon" @default.
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- W1977343424 doi "https://doi.org/10.1143/jjap.49.095601" @default.
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