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- W1977359261 abstract "Thin Fe films were deposited by dc sputtering onto Si to thicknesses between 50 and 120 nm. This was followed by implantation of 350 keV As to doses between 5 × 1015 and 2.5 × 1016 cm−2, or 300 keV Xe to doses between 5 × 1015 and 1 × 1016 cm−2. Some of the samples were subsequently annealed at 900°C for 2.5 h. The mixing between the Si and Fe was studied with Rutherford backscattering (RBS). The analysis of the RBS data was done with the combinatorial optimisation simulated annealing (SA) algorithm. Although a homogeneous silicide layer is not formed, the superposition of the Si and Fe profiles after annealing leads to the formation of regions of β-FeSi2, as is demonstrated by temperature dependent photoabsorption experiments which show the existence of a band gap of 0.87 eV at room temperature." @default.
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- W1977359261 date "1998-04-01" @default.
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- W1977359261 title "RBS/simulated annealing analysis of silicide formation in Fe/Si systems" @default.
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- W1977359261 doi "https://doi.org/10.1016/s0168-583x(97)00964-6" @default.
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