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- W1977532561 abstract "Complimentary metal–oxide–semiconductor (CMOS) transistors with polycrystalline Si (poly-Si)/SiGe as the gate material are presented. The SiGe integration using a local CMOS process was developed. It uses a single n + -doped poly-Si 0.7 Ge 0.3 gate instead of single n + - or double-doped poly-Si gate. After deposition, both the poly-Si and SiGe films used as gate layers were doped with phosphorus ions. The threshold, subthreshold, and low-frequency 1/ f noises of poly-Si/SiGe CMOS transistors are reported. Improvements in the performance of the poly-Si/SiGe CMOS transistor compared with the poly-Si gate CMOS transistor are presented, indicating that the presence of Ge in the gate material is beneficial, which agrees with results reported in the literature. The n-channel metal–oxide–semiconductor (n-MOS) transistor characteristics in the diode mode ( V GS = V DS ) are shown, followed by transconductance ( G m ) results. Improvements in the current–voltage ( I – V ) characteristics are observed when poly-Si/SiGe CMOS transistors are compared with poly-Si gate CMOS transistors. Another key point is the low-frequency 1/ f noise characteristic, which makes the latter transistors promising devices for RF applications." @default.
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- W1977532561 date "2010-04-01" @default.
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- W1977532561 title "DC Improvements and Low-Frequency 1/f Noise Characteristics of Complimentary Metal–Oxide–Semiconductor Transistors with a Single n<sup>+</sup>-Doped Polycrystalline Si/SiGe Gate Stack" @default.
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- W1977532561 doi "https://doi.org/10.1143/jjap.49.04dc04" @default.
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