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- W1977583389 abstract "Abstract We report on gate patterning development for the 45 nm node and beyond. Both poly-Si and different metal gates in combination with medium- k and high- k dielectrics have been defined. Source/drain silicon recess has been characterized for different stacks, yielding optimised processes for all investigated. Using hardmask based etching allowed us to produce sub-20 nm poly-Si and metal gates. Implementation of advanced metal gate patterning in already developed multi-gate field effect transistors (MuGFET) devices has been demonstrated." @default.
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- W1977583389 date "2005-05-01" @default.
- W1977583389 modified "2023-10-14" @default.
- W1977583389 title "Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development" @default.
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- W1977583389 doi "https://doi.org/10.1016/j.microrel.2004.11.005" @default.
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