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• W1977584172 abstract "In this work, we studied the effects of postdeposition anneal (PDA) time on the material and electrical characteristics of the metal-oxide-semiconductor capacitor (MOSCAP) with high-k (HfO2) material on high-indium-content In0.52Ga0.48As. Thin equivalent oxide thickness (EOT∼1nm) with excellent capacitance voltage (C-V) characteristics has been obtained. Indium content in InGaAs with high-k material and PDA time were correlated with C-V characteristics of TaN/physical vapor deposition HfO2∕InGaAs MOSCAPs. It was found that high indium content resulted in improved C-V characteristics, EOT, hysteresis, and especially frequency dispersion (∼5%)." @default.
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• W1977584172 date "2008-03-17" @default.
• W1977584172 modified "2023-10-03" @default.
• W1977584172 title "Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition" @default.
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• W1977584172 doi "https://doi.org/10.1063/1.2844879" @default.
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