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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1977616242> ?p ?o ?g. }

• W1977616242 endingPage "16372" @default.
• W1977616242 startingPage "16369" @default.
• W1977616242 abstract "Complete neglect of differential overlap cluster calculations have been performed for ${mathrm{H}}^{+}$ on a clean GaAs(110) surface. The results demonstrate that ${mathrm{H}}^{+}$ prefers to bond with the surface As atom rather than the surface Ga atom. Investigation of a microscopic model for hydrogen (H) -induced passivation on p-type GaAs(110) surfaces, where a surface Ga atom is replaced by a Be acceptor atom, also shows that, in equilibrium, the H atom attaches itself to the dangling bond of the As atom next to the Be atom. Passivation occurs due to compensation when the H atom captures a free hole to form ${mathrm{H}}^{+}$ which then subsequently finds the As atom next to the acceptor. This microscopic model may account for the As-H stretching lines observed in infrared experiments as well as for the absence of Ga-H lines." @default.
• W1977616242 created "2016-06-24" @default.
• W1977616242 creator A5070200625 @default.
• W1977616242 creator A5089255448 @default.
• W1977616242 date "1993-06-15" @default.
• W1977616242 modified "2023-10-18" @default.
• W1977616242 title "H-induced passivation of GaAs(110)-Be surface-acceptor systems" @default.
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• W1977616242 doi "https://doi.org/10.1103/physrevb.47.16369" @default.
• W1977616242 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/10006066" @default.
• W1977616242 hasPublicationYear "1993" @default.
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