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- W1977647146 abstract "Abstract A new method for accounting for quantum effects in semiclassical device simulation is presented. The approach is based on the solution to the Wigner–Boltzmann equation, which is derived from the Schrodinger equation. The Wigner–Boltzmann equation is truncated to order ℏ 2 , and then formulated using spherical harmonics. This facilitates analytical evaluation of the collision integral, and allows for reduction of dimensionality. The Wigner–Boltzmann equation is solved self-consistently with the Poisson and hole-current continuity equations for a BJT and a MOSFET. The results show that the carrier concentrations predicted by the Wigner–Boltzmann equation near the base–emitter junction and the MOSFET channel are less than that predicted by the semiclassical Boltzmann model. Calculations show terminal currents to be 2% and 7% lower for the quantum simulations than the semiclassical results for the BJT and MOSFET, respectively." @default.
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- W1977647146 date "2005-02-01" @default.
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- W1977647146 title "Incorporation of quantum corrections to semiclassical two-dimensional device modeling with the Wigner–Boltzmann equation" @default.
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- W1977647146 doi "https://doi.org/10.1016/j.sse.2004.08.017" @default.
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