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• W1977719938 abstract "Abstract An AFM and SEM study of the topography induced by 20 keV Si + , Ar + and Xe + ion bombardment of Si at 45 ° incidence angles and for ion fluences between 10 17 and 10 20 cm −2 has been undertaken at room temperature. All species generate an atomic scale random roughness, the magnitude of which does not increase extensively with ion fluence, suggesting the operation of a local relaxation process. This nanometre scale roughness forms, for Ar and Xe, a background for coarser micrometre scale structures such as pits, chevrons and waves. Apart from isolated etch pits Si + irradiation generates no repetitive micrometre scale structures. Xe + irradiation produces well developed transverse waves while Ar + irradiation results in isolated chevron-like etch pit trains and ripple patches. This latter pattern evolves, with increasing ion fluence, to a corrugated facet structure. The reasons for the different behaviours are still not fully clarified." @default.
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• W1977719938 date "1995-07-01" @default.
• W1977719938 modified "2023-09-22" @default.
• W1977719938 title "Topography development on selected inert gas and self-ion bombarded Si" @default.
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• W1977719938 doi "https://doi.org/10.1016/0042-207x(95)00003-8" @default.
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