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- W1977726996 abstract "A self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT) with an InGaAs emitter cap layer that has very low emitter resistance is described. In this structure, a nonalloyed emitter contact allows the emitter and base electrodes to be formed simultaneously and in a self-aligned manner. The reduction of emitter resistance greatly improves the HBT's transconductance and cutoff frequency. In fabricated devices with emitter dimensions of 2 mu m*5 mu m, a transconductance-per-unit-area of 16 mS/ mu m/sup 2/ and a cutoff frequency of 80 GHz were achieved. To investigate high-speed performance, a 21-stage ECL ring oscillator was fabricated using these devices. Propagation delay times as low as 5.5 ps/gate were obtained, demonstrating the effectiveness of this structure.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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- W1977726996 date "1988-01-01" @default.
- W1977726996 modified "2023-10-18" @default.
- W1977726996 title "Self-aligned AlGaAs/GaAs HBT with low emitter resistance utilizing InGaAs cap layer" @default.
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- W1977726996 doi "https://doi.org/10.1109/16.2408" @default.
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