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• W1977733139 abstract "Vertical InAs nanowires (NWs) wrapped by a thin high-κ dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick Al2O3 and HfO2 films. The native oxide on the NWs is significantly reduced upon high-κ deposition, although less effective than for corresponding planar samples, resulting in a 0.8 nm thick interface layer with an In-/As-oxide composition of about 0.7/0.3. The exact oxide reduction and composition including As-suboxides and the role of the NW geometry are discussed in detail." @default.
• W1977733139 created "2016-06-24" @default.
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• W1977733139 date "2011-11-28" @default.
• W1977733139 modified "2023-10-18" @default.
• W1977733139 title "Interface composition of InAs nanowires with Al₂O₃ and HfO₂ thin films" @default.
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• W1977733139 doi "https://doi.org/10.1063/1.3664399" @default.
• W1977733139 hasPublicationYear "2011" @default.
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