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• W1977745113 abstract "Dual-layer graphene (DLG) interconnects with hexagonal boron nitride (h-BN) as intercalated insulating layer have been demonstrated. The DLG employs graphene grown by chemical vapor deposition process with h-BN serving as a barrier preventing interlayer scattering, which degrades carrier transport in multilayer graphene. The conductive behavior in dual-layer structures is compared with monolayer graphene and randomly stacked bilayer graphene. Reduced resistance is observed in DLG, which exhibits higher current-carrying capacity and maximum power density. In addition, DLG wire is shown to be robust under constant voltage stressing (10 V) at an elevated temperature (150°C) with the mean time to failure ~75 times higher than that of stacked bilayer graphene wires." @default.
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• W1977745113 date "2014-12-01" @default.
• W1977745113 modified "2023-10-14" @default.
• W1977745113 title "Electrical Conduction and Reliability in Dual-Layered Graphene Heterostructure Interconnects" @default.
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• W1977745113 doi "https://doi.org/10.1109/led.2014.2360815" @default.
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