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• W1977761230 abstract "The vertical field (Eeff) dependence of electron and hole mobility (μn,p) in MOSFETs with reoxidized nitrided oxide (RONO) gate dielectrics is characterized and compared with that of MOSFETs with thermal oxide (SiO2) gate dielectrics over temperatures ranging from 100 to 350 K. In the devices studied it is found that, at 300 K, μn(RONO)/μn(SiO2) is less than 1 for Eeff < 0.75 MV cm−1 and is 1.12 at Eeff = 1 MV cm−1. As temperature is decreased to 100 K, μn(RONO)/μn(SiO2) at Eeff = 1 MV cm−1 increases to 1.3. Furthermore, the Eeff range over which μn(RONO) >μn(SiO2) widens with decreasing temperature. However, μp(RONO)/μp(SiO2) is found to be consistently less than 1 at 300 K, and is degraded severely with decreasing temperature. A laser scanning technique was applied to measure the stress in thin N-rich Si layers that are on the surface of Si substrates and significant tensile stress was found. A model based on the nitridation-induced donor layer and tensile stress in the N-rich surface Si layer of RONO devices is proposed to qualitatively explain the field and temperature dependence of both μn(RONO) and μp(RONO). In addition, the saturation velocity of electrons (νsat) in RONO MOSFETs, important to the performance of short channel devices, is also determined. Implications of μn,p(RONO) and νsat on the performance of the RONO technology are discussed." @default.
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• W1977761230 date "1992-01-01" @default.
• W1977761230 modified "2023-10-03" @default.
• W1977761230 title "Temperature and field dependence of carrier mobility in MOSFETs with reoxidized nitrided oxide gate dielectrics" @default.
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• W1977761230 doi "https://doi.org/10.1016/0038-1101(92)90299-r" @default.
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