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- W1977787792 abstract "N‐doped ZnO thin films (ZnO:N) with c‐axis preferred orientation were prepared on p‐Si(100) wafers, using an RF magnetron sputter deposition. For ZnO deposition, N2O gas was employed as a dopant source and various deposition conditions such as N2O gas fraction and RF power were applied. In addition, the film bulk acoustic resonator (FBAR) devices with three kinds of top electrodes patterns were fabricated by using the N‐doped ZnO thin films as the piezoelectric layers. The depth profiles of the nitrogen [N] atoms incorporated into the ZnO thin films were investigated by an Auger Electron Spectroscopy (AES) and the nano‐scale structural characteristics of the N‐doped ZnO (ZnO:N) thin films were also investigated by a scanning electron microscope (SEM) technique. The fabricated resonators were evaluated by measuring the return loss (S11) characteristics using a probe station and E8361A PNA Network Analyzer." @default.
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- W1977787792 date "2011-01-01" @default.
- W1977787792 modified "2023-10-10" @default.
- W1977787792 title "Nano-structural Characteristics of N-doped ZnO Thin Films and Fabrication of Film Bulk Acoustic Resonator Devices" @default.
- W1977787792 doi "https://doi.org/10.1063/1.3666352" @default.
- W1977787792 hasPublicationYear "2011" @default.
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