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• W1977815963 abstract "Experimental results are presented on the optical characterization of high-dose oxygen-implanted (∼2×1018 cm−2, 200 keV) and annealed (6 h, 1300 °C) silicon-on-insulator structures by spectroscopic ellipsometry. The ellipsometric sensitivity to variations in the multilayer geometry, induced by small variations in implantation dose, is demonstrated. In the analysis a five-layer model is used. For the given conditions of sample preparation the results show a linear relation between the thicknesses of the buried oxide layer and the silicon top layer. Additional spectroscopic reflectometry measurements, interpreted by using a simplified two-layer model, are correlated to the ellipsometric results." @default.
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• W1977815963 date "1991-12-01" @default.
• W1977815963 modified "2023-09-27" @default.
• W1977815963 title "Characterization of annealed high-dose oxygen-implanted silicon by spectroscopic ellipsometry and reflectometry" @default.
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• W1977815963 doi "https://doi.org/10.1063/1.349835" @default.
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