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• W1978008106 abstract "Silicon carbide nanorods with a typical diameter of about 20 nm and a length ranging from 100 nm to a few microns have been formed by rapid thermal processing (RTP) of thin films containing a mixture of carbon and iron over silicon wafers at temperatures ranging from 1000 to 1200 °C. It is proposed that SiC nanorods were formed by solid–liquid–solid process of Si and C with Fe as catalyst. The controllability offered by RTP is crucial as field emission study showed that the turn-on field of the SiC nanorods was a strong function of their length and number density." @default.
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• W1978008106 date "2003-09-01" @default.
• W1978008106 modified "2023-10-17" @default.
• W1978008106 title "Controlled growth of silicon carbide nanorods by rapid thermal process and their field emission properties" @default.
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• W1978008106 doi "https://doi.org/10.1016/j.cplett.2003.08.001" @default.
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