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- W1978086324 abstract "Ferroelectric layered‐oxides SrBi2Ta2O9 thin films were prepared on Pt coated Si wafers and single‐crystal sapphire by metalorganic chemical vapor deposition (MOCVD). The films were specular and crack‐free and showed complete crystallization at temperatures between 650 and 700 °C. Good ferroelectric properties were obtained for a 200 nm thick film with Pt electrodes: 2Pr and Ec were about 8.3 μC/cm2 and 60 kV/cm, respectively. The leakage currents were as low as 8×10−9 A/cm2 at 150 kV/cm. The films also showed fatigue‐free characteristics: no fatigue was observed up to 1.4×1010 switching cycles. These high quality MOCVD films make high‐intensity (≳1 Mbit) nonvolatile memory devices possible." @default.
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- W1978086324 date "1996-01-29" @default.
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- W1978086324 title "Metalorganic chemical vapor deposition of ferroelectric SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> thin films" @default.
- W1978086324 doi "https://doi.org/10.1063/1.116486" @default.
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