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- W1978097639 abstract "Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating behaviour is evident. Resistance-temperature data for devices with a physical width of order 100 nm demonstrate suppression of superconductivity, leading to dissipative behaviour that is shown to be consistent with the activation of phase-slip below Tc. This study suggests that by exploiting the Ga-impurity poisoning introduced by the FIB into the periphery of the nanowire, a central superconducting phase-slip nanowire with sub-10 nm dimensions may be engineered within the core of the nanowire." @default.
- W1978097639 created "2016-06-24" @default.
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- W1978097639 date "2009-10-21" @default.
- W1978097639 modified "2023-09-25" @default.
- W1978097639 title "Superconducting transition in Nb nanowires fabricated using focused ion beam" @default.
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- W1978097639 doi "https://doi.org/10.1088/0957-4484/20/46/465302" @default.
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