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- W1978103688 abstract "A process for manufacturing small-to-medium scale GaAs integrated circuits is described. Integrated FET's, diodes, resistors, thin-film capacitors, and inductors are used for monolithic integration of digital and analog circuits. Direct implantation of Si into > 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sup> Ω.cm resistivity substrates produces n-layers with ± 10-percent sheet resistance variation. A planar fabrication process featuring retained anneal cap (SiO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> ), proton isolation, recessed Mo-Au gates, silicon nitride passivation, and a dual-level metal system with polyimide intermetal dielectric is described. Automated on-wafer testing at frequencies up to 4 GHz is introduced, and a calculator-controlled frequency domain test system described. Circuit yields for six different circuit designs are reported, and process defect densities are inferred." @default.
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- W1978103688 date "1982-07-01" @default.
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- W1978103688 title "A manufacturing process for analog and digital gallium arsenide integrated circuits" @default.
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- W1978103688 doi "https://doi.org/10.1109/t-ed.1982.20830" @default.
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