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- W1978127537 abstract "High-quality indium antimonide crystals, suitable for infrared device applications, were grown by vertical Bridgman technique. An indigenous Bridgman setup with some modifications was employed for this purpose. A series of experiments were carried out with different ampoule lowering rate, axial temperature gradient and ampoule cone angle in order to optimise the growth conditions. The grown crystals were subjected to XRD and EDX analyses to assess chemical homogeneity. Chemical etching revealed no observable variation in defect-density distribution. Electrical properties were also studied along the length of the crystal. IR transmittance studies, carried out on a sample 1.5 cm in diameter and 300 μm in thickness, revealed the high-percentage transmittance and sharp cutoff at shorter wavelength end which are the essential conditions for an infrared filter." @default.
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- W1978127537 date "1999-04-01" @default.
- W1978127537 modified "2023-10-11" @default.
- W1978127537 title "Bulk growth of InSb crystals for infrared device applications" @default.
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- W1978127537 doi "https://doi.org/10.1016/s0022-0248(98)01398-0" @default.
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