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- W1978172312 abstract "Crystals of p-type RuS2 (EG = 1.3 eV), which showed remarkably stable photocurrents for hydrogen evolution, were grown. Despite medium quality of the semiconductor material, revealed by only moderate blocking character of the barrier, relatively high photovoltages (0.45 V) in the presence of different redox systems, and appreciable quantum efficiencies at lower light intensities, were observed. The quantum efficiency was found to decrease with increasing illumination level of the electrode due to greater influence of the recombination processes. Photoelectrochemical measurements performed in the presence of different redox species revealed the occurrence of a systematic shift in the band edge positions (Fermi level pinning) due to the presence of a high concentration of surface states. Since n-RuS2 is a good photoelectrode for oxygen evolution, oxygen reduction was studied on p-type, as well as on degenerate, electrodes. The kinetics of such a reaction were, however, found to be slow both in acidic and basic solutions." @default.
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- W1978172312 date "1985-12-01" @default.
- W1978172312 modified "2023-09-26" @default.
- W1978172312 title "Photoelectrochemical and electrocatalytic behaviour of p-type ruthenium disulphide electrodes" @default.
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- W1978172312 doi "https://doi.org/10.1016/0022-0728(85)85080-4" @default.
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