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- W1978177546 abstract "Abstract Sapphire (α-Al2O3) single crystals were implanted with different doses of Pt and W ions in the range of 1 × 1014 at/cm2 to 5 × 1016 at/cm2 at room temperature. Detailed angular scans through the main axial directions show that up to 1015 at/cm2 fluences about 80% of the W and Pt ions are incorporated into substitutional or near substitutional lattice sites. Below the amorphization threshold implantation damage show a double peak structure which anneals out partially at low temperature (800oC). Amorphization of the implanted region starts for doses of the order of 1 × 1016 at/cm2. The amorphous layer regrowths epitaxially in vacuum at 1100oC, with a velocity of 3 A/min and stops when the crystalline/amorphous interface reaches the region of maximum Pt concentration. When the annealing is done at ambient atmosphere the damage recovers completely at 1100oC even for doses of the order of 5 × 1016 Pt+/cm2 leading to the formation of Pt precipitates." @default.
- W1978177546 created "2016-06-24" @default.
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- W1978177546 date "1999-01-01" @default.
- W1978177546 modified "2023-09-29" @default.
- W1978177546 title "Lattice location and annealing behaviour of Pt and W implanted sapphire" @default.
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- W1978177546 doi "https://doi.org/10.1016/s0168-583x(98)00576-x" @default.
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