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• W1978204810 abstract "Room-temperature carrier transport in Si nanowire (NW) MOSFETs with gate lengths and diameters down to 25 and 8 nm, respectively, is analyzed. It is shown that in Si NWs, holes exhibit channel injection and thermal velocities, as high as the highest obtained for uniaxially strained planar Si-channel electrons, likely due to combination of strain and confinement." @default.
• W1978204810 created "2016-06-24" @default.
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• W1978204810 date "2012-12-01" @default.
• W1978204810 modified "2023-10-16" @default.
• W1978204810 title "Room-temperature carrier transport in high-performance short-channel Silicon nanowire MOSFETs" @default.
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• W1978204810 doi "https://doi.org/10.1109/iedm.2012.6479003" @default.
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