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• W1978213534 abstract "Abstract Thermal oxidation of Ge + -implanted silicon (1 0 0) has been investigated over a wide range of Ge-fluences and temperatures under both wet and dry oxidation conditions. Implanted samples were pre-oxidized and then etched to produce a common sample set with a thin Ge:Si layer at the surface to ensure a common sample morphology for various experimental conditions. Oxidation kinetics as a function of Ge-fluence and annealing temperature are reported and compared to results from virgin silicon (1 0 0). Random and ion-channeled Rutherford backscattering (RBS) characterization techniques, accompanied by computer simulations (SIMNRA), were used for oxide and Ge-segregated layer thickness and composition measurements. Ge-rich Ge x Si 1− x segregated layer composition are presented as a function of implantation and oxidation conditions." @default.
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• W1978213534 date "2007-08-01" @default.
• W1978213534 modified "2023-10-01" @default.
• W1978213534 title "Dose-dependent thermal oxidation of Ge+-implanted silicon" @default.
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• W1978213534 doi "https://doi.org/10.1016/j.nimb.2007.04.240" @default.
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