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- W1978214429 abstract "Silicon-On-Insulator (SOI) materials were modified by Si ion implantation with different doses, as reported in this letter. The electrical performance was studied and the effect of a modification technique on the SOI materials was investigated. The characteristic, obtained by pseudo-metal-oxide-semiconductor (pseudo-MOS) method, showed that the drain ID current versus gate voltage VG(ID−VG) curves shifted along the axis of VG with the change of Si ion implantation doses. The results of electron paramagnetic resonance (EPR), x-ray photoelectron spectroscopy (XPS), and electronic test suggested that the parameters of implantation affect the electrical performance and that the metastable electron traps are introduced into the buried oxide layers of SOI materials." @default.
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- W1978214429 date "2008-02-28" @default.
- W1978214429 modified "2023-09-26" @default.
- W1978214429 title "Research on metastable electron traps in the modified SOI materials induced by Si ion implantation" @default.
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- W1978214429 doi "https://doi.org/10.1116/1.2839858" @default.
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