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- W1978220187 abstract "In order to identify an appropriate low-temperature surface passivation that could be used for bulk lifetime estimation of high resistivity (HR) (> 1 k·cm) silicon for radiation detectors, different passivating layers were evaluated on n-type and p-type standard Czochralski (CZ), HR magnetic CZ and HR float zone (FZ) substrates. Minority carrier lifetime measurements were performed by means of a μW-PCD set-up. The results show that SiNx PECVD layers deposited at low temperatures (≤ 250°C) may be used to evaluate the impact of different processing steps and treatments on the substrate characteristics for radiation detectors. First results are obtained about a preliminary thermal treatment experiment to evaluate the thermal stability of the passivating layers, as well as the potential impact of the generation of thermal donors on minority carrier lifetime." @default.
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- W1978220187 date "2007-10-01" @default.
- W1978220187 modified "2023-10-02" @default.
- W1978220187 title "Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors" @default.
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- W1978220187 doi "https://doi.org/10.4028/www.scientific.net/ssp.131-133.431" @default.
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