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• W1978269022 abstract "Abstract In the present work the influence of annealing temperature on the structural and optical properties of the In 2 O 3 films deposited by electron beam evaporation technique in the presence of oxygen was studied. The deposited films were annealed from 350 to 550 °C in air. The chemical compositions of In 2 O 3 films were carried out by X-ray photoelectron spectroscopy (XPS). The film structure and surface morphologies were investigated as a function of annealing temperature by X-ray diffraction (XRD) and atomic force microscopy (AFM). The structural studies by XRD reveal that films exhibit preferential orientation along (2 2 2) plane. The refractive index ( n ), packing density and porosity (%) of films were arrived from transmittance spectral data obtained in the range 250–1000 nm by UV–vis-spectrometer. The optical band gap of In 2 O 3 film was observed and found to be varying from 3.67 to 3.85 eV with the annealing temperature." @default.
• W1978269022 created "2016-06-24" @default.
• W1978269022 creator A5073229990 @default.
• W1978269022 creator A5086564435 @default.
• W1978269022 date "2010-05-01" @default.
• W1978269022 modified "2023-09-25" @default.
• W1978269022 title "Annealing temperature dependent on structural, optical and electrical properties of indium oxide thin films deposited by electron beam evaporation method" @default.
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• W1978269022 doi "https://doi.org/10.1016/j.cap.2009.10.014" @default.
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