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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1978288857> ?p ?o ?g. }

• W1978288857 abstract "The nitrogen ambient encapsulation (NAE) technique is introduced to improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistors under positive gate bias stress (PGBS). For the NAE devices, the threshold voltage (Vth) shift is significantly decreased from 1.88 to 0.09 V and the reduction of saturation drain current is improved from 15.75 to 5.61 μA as compared to the bare a-IGZO counterparts after PGBS. These improvements are attributed to the suppression of negatively charged oxygen adsorption on the a-IGZO backsurface and thereby well maintain the channel potential of NAE devices, which in turn sustain the Vth during PGBS." @default.
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• W1978288857 date "2012-04-09" @default.
• W1978288857 modified "2023-10-17" @default.
• W1978288857 title "Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient" @default.
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• W1978288857 doi "https://doi.org/10.1063/1.3702794" @default.
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