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- W1978302147 abstract "The optical properties of homoepitaxial GaN layers deposited by organometallic vapor phase epitaxy on stripe-patterned GaN films on 6H-SiC substrates have been investigated. Analysis of the spatially-resolved Raman scattering spectra indicate an improvement in material quality of the overgrown region. Room-temperature color cathodoluminescence imaging and low-temperature photoluminescence measurements indicate that a donor and an acceptor, different from those detected in the underlying GaN/AlN/SiC substrate, have been incorporated in the epitaxial layer. Detailed photoluminescence studies of the near-band-edge emission strongly suggest that Si is the additional donor detected in the homoepitaxial GaN layer. Its occurrence, along with that of an acceptor-related defect which is primarily found in the laterally overgrown region, is discussed." @default.
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- W1978302147 date "1998-06-08" @default.
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- W1978302147 title "Optical characterization of lateral epitaxial overgrown GaN layers" @default.
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- W1978302147 doi "https://doi.org/10.1063/1.121517" @default.
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