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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1978343134> ?p ?o ?g. }

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• W1978343134 abstract "A dry-processed planar-type cold cathode has been developed using a nanometer-sized Si dot film as an electron drift layer. Multilayered Si-nanodot films were fabricated on a n-type single-crystalline Si (c-Si) wafer by sequential dry processing (low-pressure chemical vapor deposition) and subsequent thermal oxidation. Planar-type cold cathodes composed of a thin Au film, a nanometer-sized Si dot film, a c-Si substrate, and a back contact exhibit fluctuation-free electron emission with small angle dispersion. The emission efficiency was 0.14% at an applied voltage of 20V for the device with the average Si dot size of 1.3nm. The emission model based on multiple tunneling cascade in nanocrystalline silicon dot chain interconnected via tunnel oxide has been supported by the device fabricated using dry processing." @default.
• W1978343134 created "2016-06-24" @default.
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• W1978343134 date "2010-03-01" @default.
• W1978343134 modified "2023-10-07" @default.
• W1978343134 title "Development of dry-processed silicon nanodot planar cold cathode and its electron emission properties" @default.
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• W1978343134 doi "https://doi.org/10.1116/1.3275746" @default.
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